Analysis of electrical performance of MgZnO/ZnO high electron mobility transistor

The electrical performance of MgZnO/ZnO high electron mobility transistor (HEMT) is analyzed in this work. A physics-based analysis is performed to compute the two-dimensional electron gas (2-DEG density: n(s)) for different gate-voltage (V-g), difference in the Fermi potential (E-F) and position of first sub-band (E-0), linearity range measurement parameter: d(E-F - E-0)/dV(g), gate-source capacitance (C-gs) for different thickness of barrier layer (d = 30, 35, and 40 nm); Mg composition (x = 0.37, 0.47, and 0.57); and temperature (T = 300, 400, and 500 K). It is noticed that in the weak-inversion region: - 4 V < V-g < 0.1 V; the magnitude of n(s) is highest for highest value of d (= 40 nm). The results show that n(s) is enhanced with increase in mole fraction of Mg and its magnitude is computed highest for x = 0.57 due to increased polarization charges at the hetero-interface generated due to strain. It is noticed that in the weak-inversion region, n(s) is increased significantly with respect to temperature as compared to the other region i.e., 0.1 V < V-g < 6 V.