Stress and Curvature Effects in Layered 2D Ferroelectric CuInP2S6

被引:13
|
作者
Liu, Yongtao [3 ]
Morozovska, Anna N. [1 ]
Ghosh, Ayana [2 ]
Kelley, Kyle P. [3 ]
Eliseev, Eugene A. [4 ]
Yao, Jinyuan [5 ]
Liu, Ying [5 ]
Kalinin, Sergei [6 ]
机构
[1] Natl Acad Sci Ukraine, Inst Phys, UA-03028 Kiev, Ukraine
[2] Oak Ridge Natl Lab, Computat Sci & Engn Div, Oak Ridge, TN 37830 USA
[3] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA
[4] Natl Acad Sci Ukraine, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine
[5] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[6] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
基金
美国国家科学基金会;
关键词
CuInP2S6; ferroelectric; flexoelectric; strain; curvature; 2D materials; piezoresponse force microscopy; GRAPHENE;
D O I
10.1021/acsnano.3c08603
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Nanoscale ferroelectric 2D materials offer the opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on polarization in CIPS via piezoresponse force microscopy and spectroscopy. To explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS, we introduce the finite element Landau-Ginzburg-Devonshire model, revealing strong changes in hysteresis characteristics in regions subjected to tensile and compressive strain. The piezoresponse force microscopy (PFM) results show that bending induces ferrielectric domains in CIPS, and the polarization-voltage hysteresis loops differ in bending and nonbending regions. These studies offer insights into the fabrication of curvature-engineered nanoelectronic devices.
引用
收藏
页码:22004 / 22014
页数:11
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