Improved Haacke's quality factor, third order nonlinear susceptibility and specific capacitance realized for PbS thin films through La3+doping

The present study examines the third order NLO and electrochemical properties of spray deposited lanthanum doped PbS (PbS:La) thin films. FCC crystallization was confirmed by XRD patterns along the plane (2 0 0). PbS crystallites vary in size between 27 and 36 nm with La doping concentration. Surface morphology improved with La doping. La doping increases the band gap from 1.97 to 2.18 eV. Near band edge (NBE) emissions in PL spectra originates from electron-hole recombination. A low resistivity of 0.23 x10-3 omega-m was realized for PbS film doped with 4 wt% La concentration. Figure of merit of pure PbS improves from 1.32 x 10-3 omega- 1 to 1.607 x 10-2 omega- 1 with La doping. La doping modifies the energy states and band gap of PbS favouring strong nonlinear optical absorption. PbS:La thin films demonstrate self-defocusing due to temperature effects caused by absorption of single photons or free carriers. As a result of the low cationic field strength and high polarizability of La3+ ions, PbS exhibits a higher nonlinear refractive index. The nonlinear susceptibility and refractive index were found to be in the range 3.23-5.33 x 10-6 esu and 2.74 to 3.64 x 10-9 cm2/W, respectively. From the electrochemical studies, increased specific capacitance (256.46 F/g) and decreased charge transfer resistance (12 x 103 omega) was observed for the 4 wt% La doped film.