A 24 GHz Harmonic-Injection Doherty Power Amplifier with 42% PAE at 6 dB OPBO in 100 nm GaN Technology

被引：1

作者：

Mugisho, Moise Safari ^{[1
,2
]}

Friesicke, Christian ^{[1
]}

Ayad, Mohammed ^{[3
]}

Maier, Thomas ^{[1
]}

Quay, Ruediger ^{[1
,2
]}

机构：

[1] Fraunhofer Inst Appl Phys, Freiburg, Germany

[2] Univ Freiburg, Freiburg, Germany

[3] United Monolith Semicond, Villebon Sur Yvette, France

来源：

2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年

关键词：

Doherty power amplifier; GaN; harmonic injection; high efficiency; load modulation; EFFICIENCY;

D O I：

10.23919/EuMIC58042.2023.10289079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design of a two-stage harmonic-injection Doherty power amplifier (HI-DPA) in which a signal at the second harmonic frequency (2f0) is injected into the drain of the auxiliary transistor's power stage. The injected 2f0 signal is generated by an on-chip single-stage injection power amplifier. The HI-DPA was manufactured on a 100 nm GaN HEMT technology. Preliminary continuous-wave (CW) on-wafer measurements performed at 24 GHz show that the HI-DPA achieves a power-added efficiency (PAE) of 42% at peak-output-power (POP) and 6 dB output-power-back- off (OPBO) with an associated saturated output power (P-SAT) of 33 dBm.

引用

页码：337 / 340

页数：4

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