Experimental and theoretical study on hybrid thermionic-photovoltaic energy converters with graphene/semiconductor Schottky junction

被引:6
|
作者
Qiu, Hao [1 ,2 ]
Lin, Shisheng [3 ]
Xu, Haoran [1 ,2 ]
Hao, Guanghui [4 ]
Xiao, Gang [1 ,2 ]
机构
[1] Zhejiang Univ, State Key Lab Clean Energy Utilizat, 38 Zheda Rd, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Key Lab Clean Energy & Carbon Neutral Zhejiang Pro, 966 Xiuyuan Rd, Jiaxing 314031, Peoples R China
[3] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China
[4] Beijing Vacuum Elect Res Inst, Cathode Engn Ctr, 13 Jiuxianqiao Rd, Beijing 100015, Peoples R China
关键词
Thermionic energy conversion; Thermophotovoltaics; Light-transparent anode; Graphene/semiconductor heterojunction; Super-Planckian near-field radiation; Photon tunneling; THERMOPHOTOVOLTAIC SYSTEM; WORK FUNCTION;
D O I
10.1016/j.enconman.2022.116584
中图分类号
O414.1 [热力学];
学科分类号
摘要
Both thermionic and thermophotovoltaic solid-state energy converters are being actively explored due to high output potential. Recently, hybrid thermionic-photovoltaic (TIPV) approaches was proposed to utilize both electrons and photons emitted by a high temperature cathode, whereas conventional two-terminal configuration is constrained by current-match. In this work, we develop a four-terminal TIPV converter with a dispenser cathode, a transparent indium-tin-oxide anode and tandem graphene/GaAs Schottky junction photovoltaics. The TI and PV sub-devices can operate independently without meeting the current-match constraint. The TIPV prototype yields a power density of 962 W/m(2) at the cathode temperature of 1373 K. In addition, a threeterminal TIPV converter with Nano-scale electrode gap size is modelled with advantages of surface plasmon and evanescent wave tunnelling. Results demonstrate that Super-Planckian near-field enhancement guarantees a > 4 MW/m(2) output power density for the converter. We also discuss the effects of electrode gap size and the cathode temperature. This work validates the TIPV converters with graphene/semiconductor Schottky junction and also paves a way to promising developments for the Super-Planckian near-field configuration.
引用
收藏
页数:14
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