Composition-mediated abnormal phase evolution in Ta-W films with Cr buffer layers

被引:0
|
作者
Zuo, J. D. [1 ]
Wang, Y. Q. [1 ]
Wu, K. [1 ]
Zhang, J. Y. [1 ]
Liu, G. [1 ]
Sun, J. [1 ]
机构
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
基金
中国国家自然科学基金;
关键词
Nanocrystalline metal; Ta-W thin films; Nucleation of phase transformations; Heteroepitaxy; Physical vapor deposition; NANOCRYSTALLINE; PRESSURE;
D O I
10.1016/j.scriptamat.2023.115759
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
With the monotonically increasing of W from 0 to 20 at. % in Ta-W films with Cr buffers, an abnormal phase evolution of alpha-Ta ->beta-Ta ->alpha-Ta was found, which is due to the breaking and rebuilding of alpha-Ta nucleation. A small amount of W addition could disturb the epitaxial growth of alpha-Ta on Cr layers by refining the nucleus size. Nevertheless, as a completely miscible system, Ta-W solid solutions are preferred to possess the alpha-Ta structure. With the increasing W content, the nucleation barrier of alpha-Ta is correspondingly lower, facilitating the rebuilding of alpha-Ta growth. The effect of phase evolution competes with that of solid solution strengthening in the controlling mechanism of Ta-W hardness. The hardness of the sample with low W contents is largely influenced by the proportion of beta-Ta, while the solid solution strengthening effect is more pronounced in high W.
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页数:5
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