Kirkendall effect induced NiFe: WS2 core-shell nanocubes for Dye-sensitized solar cell and battery-type Supercapacitor applications

被引:18
|
作者
Rasappan, Akshaya Subhramaniyan [1 ,2 ]
Thangamuthu, Venkatachalam [1 ]
Natarajan, Muthukumarasamy [1 ]
Velauthapillai, Dhayalan [2 ]
机构
[1] Coimbatore Inst Technol, Dept Phys, Coimbatore 641014, India
[2] Western Norway Univ Appl Sci, Dept Engn & Sci, N-5063 Bergen, Norway
关键词
NiFe nanocubes; Kirkendall effect; Dye-sensitized solar cell; Power?s law; Batter-type supercapacitor; HIGH-PERFORMANCE SUPERCAPACITOR; COUNTER ELECTRODE; ELECTROCATALYTIC ACTIVITY; TUNGSTEN DISULFIDE; FACILE SYNTHESIS; QUANTUM DOTS; HETEROSTRUCTURES; NANOSTRUCTURES; CONSTRUCTION; CATALYSTS;
D O I
10.1016/j.est.2023.106964
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In the view of developing bi-functional electrode material for integrated electronic devices, the efficient NiFe: WS2 core-shell nanocube electrode was designed for Dye-sensitized Solar cells and Supercapacitor applications. In this work, NiFe: WS2 core-shelled nanocubes were obtained with the assistance of the Kirkendall effect under probe sonication techniques. The NiFe: WS2-2 as counter electrode in Dye-sensitized solar cells yields a power conversion efficiency of 6.4 %, which is higher than bare NiFe (1.5 %) and Platinum counter electrode (4.1 %). Whereas in Supercapacitors, NiFe: WS2-2 showed a remarkable specific capacitance performance of 670.37 F/g, at a Current density of 1 A/g, and demonstrated capacitance retention of 90.05 %, over 5000 cycles. The assembled asymmetric supercapacitor device exhibits an energy density of 56.4 Wh/kg and a power density of 1015 W/kg, at 1 A/g current density. The constructed NiFe: WS2-2//AC device exhibits capacitance retention and coulombic efficiency of 82.60 % and 97.36 %, respectively in the stability test after 6000 cycles. The above fascinating results emphasize that core-shell structured NiFe: WS2-2 is a promising electrode for Dye-sensitized solar cells and Supercapacitor application, thereby paving the way for advancement in hi-tech electronic devices.
引用
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页数:19
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