Compact and Broadband Adiabatically Bent Superlattice-Waveguides With Negligible Insertion Loss and Ultra-Low Crosstalk

被引:7
|
作者
Zafar, Humaira [1 ]
Paredes, Bruna [2 ]
Taha, Inas [3 ]
Villegas, Juan E. [2 ]
Rasras, Mahmoud [2 ]
Pereira, Mauro F. [1 ]
机构
[1] Khalifa Univ Sci & Technol, Dept Phys, Abu Dhabi 127788, U Arab Emirates
[2] New York Univ, Dept Elect & Comp Engn, Abu Dhabi 129188, U Arab Emirates
[3] United Arab Emirates Univ, Dept Phys, Al Ain 15551, U Arab Emirates
关键词
Silicon Photonics; transverse electric; superlattices; optical waveguides; adiabatic; silicon-on-insulator; MODE-DIVISION; DEVICES; COUPLER;
D O I
10.1109/JSTQE.2023.3241617
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Broadband and ultra-low crosstalk integrated silicon superlattice waveguides are proposed and demonstrated, enabling high-density waveguide integration. The superlattice waveguides are implemented as S-shaped adiabatic bends that yield ultra-low crosstalks in the neighboring channels, and an extremely low insertion loss, for the TE polarization. Special materials or complex fabrication steps are not required. The bent superlattice waveguides are measured to have an average insertion loss <= 0.1 dB for all channels. The average crosstalk values are <= -37.8 dB and <= -45.2 dB, in the first nearest neighboring waveguide and the second nearest neighboring waveguide, respectively. The transmission spectra are measured over the wavelength ranges of (1.24 mu m to 1.38 mu m) and (1.45 mu m to 1.65 mu m), covering both communication wavelengths of 1310 and 1550nm. The simulation results predict an efficient broadband performance over the 500nm wavelength range (1200nmto1700nm), coveringallO, E, S, C, L& Ubands. The proof of concept was done for a silicon-on-insulator platform and the approach is applicable to other waveguide geometries and integrated photonic platforms.
引用
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页数:9
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