Design and Investigation of Split Gate Dielectric Modulated JLFET for Detection of Biological Molecule Using TCAD Simulation

被引:0
|
作者
Mandal, Rajkumar [1 ]
Mukherjee, Debasis [1 ]
机构
[1] Brainware Univ, Dept Elect & Commun Engn, Kolkata 700125, India
关键词
Band to band tunneling; Biosensor; Dielectric constant; Double gate TFET; Permittivity; Potential; Surface charge densities; BIOMOLECULES; PERFORMANCE; BIOSENSOR;
D O I
10.1007/s12633-022-02076-w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Here, a split gate insulator-controlled Junction less FET also known as SG-DM-JLFET is investigated and proposed to recognize biomolecules such as uricase, biotin, or aminopropyl- triethoxysilane in a label-free manner. The bioelectronic sensors designed using semiconductor techniques attracted researchers since they widened applications in domains such as defence, environment monitoring, medicinal field, food safekeeping, and biotechnology. On immobilizing biomolecules in nanocavity, a variation in drain current, threshold voltage, surface potential and electric field is utilized in detection of metrics to identify sensitivity of SG-DM-JLFET in molecule identification via TCAD simulation. Therefore, a high-k gate stacked DGJLT architecture is presented to reduce gate tunneling current. To bind biomolecules, the MOSFET channel section is kept exposed in a 4 number of gate architecture that is wrapped by the electrode of the gate terminal. Resultingly, the potential of the surface in the exposed region gets sensed from neutral and charged biological molecules which immobilize to underlap channel. A rise in sensitivity is detected in form of drain current, threshold voltage and surface potential. The proposed structure is valid for neutral and charged molecules. It is found that under lower supply voltages, a current sensitivity of SG-DM-JLFET is found high like 1.2 x 10(2), with potential sensitivity of 1.2 V. Thus, the SG-DM-JLFET shows good application prospects with low power consumption and high sensitivity.
引用
收藏
页码:1171 / 1179
页数:9
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