Highly selective photocatalytic CO2 reduction and hydrogen evolution facilitated by oxidation induced nitrogen vacancies on g-C3N4

被引:27
|
作者
Xu, Zhengdong [1 ]
Chen, Yang [2 ]
Wang, Binghao [1 ]
Ran, Yu [2 ]
Zhong, Junbo [2 ]
Li, Minjiao [1 ]
机构
[1] Sichuan Univ Sci & Engn, Coll Chem Engn, Zigong 643000, Peoples R China
[2] Sichuan Univ Sci & Engn, Key Lab Green Catalysis Higher Educ Inst Sichuan, Sch Chem & Environm Engn, Zigong 643000, Peoples R China
关键词
PCN; Nitrogen vacancies; Acid etching; Photocatalytic CO 2 reduction; H; 2; evolution; CARBON NITRIDE; H2O2; PRODUCTION; ENHANCEMENT; NANOSHEETS;
D O I
10.1016/j.jcis.2023.08.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The introduction of nitrogen vacancies into polymeric carbon nitride (PCN) has been attested to be a reliable strategy to enhance photocatalytic performance. Nitrogen vacancies were considered as active sites to promote the adsorption of target molecules and capture photoexcited electrons to inhibit the recombination of charge pairs, accelerate photoinduced electrons to participate in photocatalytic reaction. In this paper, a series of PCN with rich nitrogen vacancies were prepared by etching of chromic acid solution. Sample 20KCSCN had the highest photocatalytic performance whose evolution efficiency of CO2 to CO and CH4 can reach 3.9 and 0.5 & mu;mol & BULL;g- 1 & BULL;h-1, respectively. These evolution efficiencies are 2.9 and 4 times higher than that of the PCN. Meanwhile, 20KCSCN demonstrates high CO conversion selectivity and stability. The successful introduction of nitrogen vacancies not only increases the active sites of PCN surface, but also optimizes the optical structure, which dramatically boosts the separation of photoexcited charge pairs and the reduction capacity of photogenerated electrons. The enhancement mechanism for photocatalytic CO2 reduction performance of PCN was proposed. Besides, photocatalytic H2 evolution experiments were performed on all samples to confirm the universality of PCN photocatalytic activity enhancement etched by chromic acid solution. H2 evolution rate on 20KCSCN can reach 652 & mu;mol & BULL;g- 1 & BULL;h-1, which is 1.6-fold higher than that on PCN (254 & mu;mol & BULL;g- 1 & BULL;h-1) after 4 h irradiation under a 300 W Xe lamp. This work offers new venue for introducing nitrogen vacancies in PCN to
引用
收藏
页码:645 / 658
页数:14
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