Conversion of THz refractive index variation to detectable voltage change realized by a graphene-based Brewster angle device

被引:1
|
作者
Li, Xing-Yue [1 ]
Zhang, Tian-Yao [1 ]
Zhang, Zhao-Hui [1 ,2 ,3 ]
Tao, Lu-Qi [1 ]
Huang, Zheng-Yong [1 ,4 ]
Yan, Jian-Feng [5 ]
Zhao, Xuan [6 ]
Zhao, Xiao-Yan [2 ]
Li, Ying [1 ]
Wu, Xian-Hao [1 ]
Yin, Lu [1 ]
Yuan, Yuan [1 ]
Guo, Jian-Mei [1 ]
机构
[1] Univ Sci & Technol Beijing, Sch Automat & Elect Engn, Beijing 100081, Peoples R China
[2] Beijing Engn Res Ctr Ind Spectrum Imaging, Beijing 100081, Peoples R China
[3] Univ Sci & Technol Beijing, Shunde Innovat Sch, Fo Shan 528000, Peoples R China
[4] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Sec, Chongqing 400044, Peoples R China
[5] China Ship Res & Dev Acad, Beijing 100192, Peoples R China
[6] Univ Sci & Technol Beijing, Acad Adv Interdisciplinary Sci & Technol, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
All Open Access; Gold;
D O I
10.1364/OE.493453
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The Brewster effect has been previously reported as an essential mechanism for terahertz (THz) wave sensing application. However, generally in a sensing application, a complex rotation apparatus is required for detecting the slight change in Brewster angle. Here, we propose a graphene-based Brewster angle device operating at a specific terahertz frequency capable of sensing the refractive index at a fixed incident angle. In other words, our sensing device could avoid the impact of Brewster angle shift and eliminate the need for high-precision rotating equipment, which is usually required in traditional sensing applications. The conversion from the refractive index to a Volt-level detectable voltage roots from the tunability of graphene's Fermi level in the external electrical field. A linear correlation between the output voltage and the background refractive index is observed and theocratically analyzed. Furthermore, we present the improvement of our device in terms of sensing range and sensitivity by adjusting the permittivity of the dielectric substrate. As a demonstration of our proposed device, a detection range of 1.1-2.4 and a sensitivity of 20.06 V/RIU for refractive index is achieved on a high-resistance silicon substrate operating at 0.3 THz. & COPY; 2023 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:23693 / 23701
页数:9
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