Highly efficient and stable near-infrared photo sensor based on multilayer MoS2/p-Si integrated with plasmonic gold nanoparticles

The exceptional characteristics of two-dimensional materials make them highly efficient and stable for electronic and optoelectronic applications. These materials exhibit a range of beneficial properties, such as ultrafast carrier dynamics, layer-dependent energy bandgap, tunable optical properties, low power dissipation, high mobility, transparency, flexibility, simple fabrication, and ability to confine electromagnetic energy within extremely small volumes. In this work, infrared light (980 nm) photo sensors are fabricated based on a MoS2/p-Si substrate utilizing the plasmonic phenomenon of gold nanoparticles (AuNPs) to enrich the optoelectronic properties and to enhance the photoresponse. The infrared light response for (Au NPs MoS2) comes from the strong interlayer coupling, which narrow the energy gap in the heterojunction area, thus rendering heterostructures to longer wavelength detection ability. Considering the low light absorption due to indirect bandgap essence of multilayer MoS2, its infrared responsivity further enhanced by 100.21% with a response rate of 42.39/95.44 mu s (1 kHz) at a bias of 3V, a repeatability responsivity of up to 0.59 A/W, and a detectivity of 4.5 x 10(10) Jones with a maximum of 9.57 mW/cm(2) light intensity, which is maintained through surface plasmon resonance (SPR). The plasmon-assisted photo sensors can be seamlessly integrated into the semiconductor industry to boost the optoelectronic performance in practical applications.