Investigation of Single Event Transients on RingFET using 3D TCAD Simulations

In this work, the effect of heavy ion radiation on ringFET structures with gate lengths of 32 nm and 20 nm is explored using 3D TCAD simulations. The sensitive position of the device is examined by the single event transient (SET) effect on interaction of an ionizing particle, such as a heavy ion, with different Linear Energy Transfer (LET) values. It is found that the channel region closer to the drain is found to be the most sensitive region and the centre of the source is found to be the least sensitive region for normal incidence. Also the ringFET structure with shorter gate length (20 nm) is found to have lower Q(collect) when compared with larger gate length (32 nm).