Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes

被引：1

作者：

Afanasev, A. V. ^{[1
]}

Zabrodskiy, V. V. ^{[2
]}

Ilyin, V. A. ^{[1
]}

Luchinin, V. V. ^{[1
]}

Nikolaev, A. V. ^{[2
]}

Serkov, A. V. ^{[1
]}

Trushlyakova, V. V. ^{[1
]}

Chigirev, D. A. ^{[1
]}

机构：

[1] St Petersburg State Electrotech Univ LETI, St Petersburg 197022, Russia

[2] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2023年 / 57卷 / 11期

关键词：

4H-SiC; p(+)-n-n(+)-photodiode; UV-range; p(+)-epilayer; reactive ion etching RIE; responsivity;

D O I：

10.1134/S1063782623080018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The possibility to increase the responsivity of 4H-SiC p(+)-n-n(+)-photodiodes by varying the thickness of the p+-epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation of dark electrical characteristics.

引用

页码：469 / 473

页数：5

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