Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells

被引:0
|
作者
Ramesh, Rithvik [1 ,2 ]
Hsieh, Teddy [1 ,2 ]
Skipper, Alec M. [1 ,2 ]
Meng, Qian [1 ,2 ]
Wen, Kevin C. [1 ,2 ]
Shafiei, Farbod [3 ]
Wistey, Mark A. [4 ]
Downer, Michael C. [3 ]
Khurgin, Jacob B. [5 ]
Bank, Seth R. [1 ,2 ]
机构
[1] Univ Texas Austin, Microelect Res Ctr, Austin, TX 78758 USA
[2] Univ Texas Austin, Elect & Comp Engn Dept, Austin, TX 78758 USA
[3] Univ Texas Austin, Phys Dept, Austin, TX 78758 USA
[4] Texas State Univ, Dept Phys, San Marcos, TX 78666 USA
[5] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA
基金
美国国家科学基金会;
关键词
2ND-HARMONIC GENERATION;
D O I
10.1063/5.0168596
中图分类号
O59 [应用物理学];
学科分类号
摘要
Asymmetric molecular bonds possess a microscopic second-order nonlinear optical polarizability p((2)). Crystals built from them possess a macroscopic second-order nonlinear optical susceptibility, chi((2)), if their structure lacks centrosymmetry. chi((2)) can be enhanced by introducing additional asymmetry at the meta-structural level. Here, we use a dipole matrix formalism to calculate chi((2)) of asymmetric GaAs/AlGaAs coupled quantum well structures at telecommunication frequencies, for which interband (rather than previously considered intersubband) optical transitions govern optical nonlinearities. Using unit cell and envelope wavefunctions and considering all possible transitions between two bound electron and two bound hole states, we predict tenfold enhancement in chi((2)) in previously underexplored ranges of quantum well asymmetry and coupling barrier thickness. This work paves the way toward enhanced, tailorable second-order optical nonlinearities for semiconductor digital alloy and superlattice structures.
引用
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页数:6
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