Relationship Between Interface State and Dislocation Densities of Ag/TiO2/n-InP/Au Schottky Diodes

被引：0
|
作者：
Bilgili, Ahmet Kursat [1 ]
机构：
[1] Gazi Univ, Phys Dept, TR-06500 Ankara, Teknikokullar, Turkiye
来源：
BRAZILIAN JOURNAL OF PHYSICS | 2023年 / 53卷 / 01期
关键词：
N-ss; TD; Ag; TiO2; n-InP; Schottky; LAYER; THICKNESS; ANGLE;
D O I：
10.1007/s13538-022-01244-y
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this study, relationship between interface state and dislocation densities of Ag/TiO2/n-InP/Au Schottky barrier diodes with 60-& ANGS; and 120-& ANGS; TiO2 interface thickness is investigated. Samples are grown using the sputtering method and all investigations are made at room temperature. Interface state density (N-ss) is gained from current-voltage (I-V) characteristics. Structural dislocation densities are gained from high-resolution X-ray data. Different dislocation densities of TiO2 interfaces and their contribution to interface state density are discussed.
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页数：8
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