Suppression of afterglow in RbI:Tl scintillator by co-doping

被引：4
|
作者：
Miyazaki, Keiichiro [1 ]
Nakauchi, Daisuke [1 ]
Kato, Takumi [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Div Mat Sci, 8916-5 Takayama Cho, Ikoma, Nara 6300192, Japan
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2023年 / 34卷 / 13期
基金：
日本学术振兴会;
关键词：
LIGHT YIELD; LUMINESCENCE; AGGREGATION; DETECTORS; CSI(TL); BISMUTH;
D O I：
10.1007/s10854-023-10517-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
RbI:Tl and RbI:Tl co-doped with Sb, Bi, Sm, and Yb were prepared using the vertical Bridgman-Stockbarger technique, and the effects by co-doping on photoluminescence (PL) and scintillation properties were researched. Only the sample co-doped with Bi showed reduction of PL quantum yield owing to self-absorption induced by Bi3+, and the others showed almost the same values. The afterglow levels at 20 ms after X-ray irradiation for 2 ms were reduced from 6000 ppm to 4300 and 4800 ppm in Sb- and Bi-co-doped samples, respectively. Sb and Yb co-doping increased the light yield (LY), and the highest LY of 7800 photons/MeV among the samples were obtained by co-doping Sb from results of the pulse height spectra under Cs-137 gamma-ray (662 keV) irradiation.
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页数：6
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