A 23-29.5 GHz three-stage mm-wave GaN power amplifier using arbitrary two-port complex-impedance matching method

被引：0

作者：

Zhao, Zi-Ming ^{[1
]}

Zhu, Xiao-Wei ^{[1
,4
]}

Xia, Jing ^{[2
]}

Liu, Rui-Jia ^{[1
]}

Dong, Qin ^{[1
]}

Chen, Peng ^{[1
]}

Zhang, Lei ^{[1
]}

Jiang, Xin ^{[3
]}

Yu, Chao ^{[1
]}

Hong, Wei ^{[1
]}

机构：

[1] Southeast Univ, Sch Informat Sci & Engn, Nanjing, Peoples R China

[2] Jiangsu Univ, Sch Comp Sci & Commun Engn, Zhenjiang, Peoples R China

[3] Milliway Microelect Technol Co Ltd, Monolith Dept, Nanjing, Peoples R China

[4] Southeast Univ, Sch InformationScience & Engn, Nanjing 210096, Peoples R China

来源：

INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS | 2023年 / 51卷 / 11期

基金：

中国国家自然科学基金;

关键词：

complex impedance; coupling matrix; power amplifier; the optimum load traction technique; 5G; OPTIMIZATION; DESIGN; MIMO;

D O I：

10.1002/cta.3716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a broadband monolithic millimeter-wave integrated circuit GaN power amplifier (PA) with arbitrary two-port complex-impedance matching method. The proposed matching topology has been applied to interstage matching network design by modifying traditional coupling matrix and synthesizing a desired network. The optimum load traction technique is introduced to provide some more suitable Z(opts). After continuous-wave test, the three-stage MMIC PA achieves a peak PAE of 39.1% with a 34.9 dBm output power from 23 to 29.5 GHz and the measured S21 is 32.5 dB with a & PLUSMN;2.5 dB gain variation. When driven by a 400 MHz OFDM modulation signal with a PAPR of 8.5 dB, the measured ACPR is improved to -40.6/-40.7 dBc with DPD. In this case, the PA achieves an average PAE of 11.7% and a 26.7 dBm average output power.

引用

页码：5103 / 5115

页数：13