Improved Electrical Characteristics of Ge p-MOSFET with Ti-GeOx Interfacial Layer by in-situ Plasma-enhanced Atomic Layer Deposition

被引：0
|
作者：
Li, Hui-Hsuan [1 ]
Lin, Yu-Hsien [2 ]
Tu, Tsung-Yen [2 ]
Chien, Chao-Hsin [1 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
[2] Natl United Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM | 2023年
关键词：
Germanium; germanium oxide (GeOx); Ti-GeOx; HfO2; interfacial layer (IL); in situ; plasmaenhanced atomic layer deposition (PEALD); pMOSFET; HFO2-BASED GATE STACK;
D O I：
10.1109/JCS57290.2023.10102932
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we successfully investigated Hfbased gate stacks with Ti-GeOx interfacial layer (IL) on a Ge channel p-MOSFET. The results revealed that thicker TiGeOx ILs could reduce interface trap density and leakage current. The X-ray photoelectron spectroscopy (XPS) analyses indicated fewer Ge-O bonds and O-Ge-O bonds but more Ti-GeOx bonds when the IL was thicker. Meanwhile, lower leakage current and higher mobility were observed by using Hf-based gate stack with Ti-GeOx IL on a Ge channel p-MOSFET.
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页数：3
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