Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal

被引:4
|
作者
Zhang, Xinhao [1 ]
Chen, Shuo [1 ]
Ma, Heqi [1 ]
Sun, Tianyu [1 ]
Cui, Xiangyong [1 ]
Huo, Panpan [1 ]
Man, Baoyuan [1 ]
Yang, Cheng [1 ,2 ]
机构
[1] Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China
[2] Shandong Normal Univ, Shandong Prov Engn & Tech Ctr Light Manipulat, Jinan 250014, Peoples R China
基金
中国国家自然科学基金;
关键词
Schottky junction; field-effect transistor; biosensor; rectified signal; ultra-sensitive detection; INFLUENZA-VIRUS; MONOLAYER MOS2; GRAPHENE; TRANSISTOR;
D O I
10.3390/nano14020226
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy the quantitative analysis of trace targets in complex biological systems. In this report, a "rectified signal" in the output characteristic curve, instead of the "absolute value signal" in the transfer characteristic curve, is obtained and analyzed to solve these problems. The proposed asymmetric Schottky barrier-generated MoS2/WTe2 FET biosensor achieved a 10(5) rectified signal, sufficient reliability and stability (maintained for 60 days), ultra-sensitive detection (10 aM) of the Down syndrome-related DYRK1A gene, and excellent specificity in base recognition. This biosensor with a response range of 10 aM-100 pM has significant application potential in the screening and rapid diagnosis of Down syndrome.
引用
收藏
页数:14
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