A Broadband Sub-THz Band Stacked Transition of SIW-to-SIW

被引:2
|
作者
Lin, Ta-Yeh [1 ]
Lin, Shuw-Guann [1 ]
Chang, Yin-Cheng [1 ]
Hsieh, Chaoping [1 ]
Chang, Da-Chiang [1 ]
机构
[1] Natl Appl Res Labs, Taiwan Semicond Res Inst, Hsinchu, Taiwan
来源
2023 IEEE 27TH WORKSHOP ON SIGNAL AND POWER INTEGRITY, SPI | 2023年
关键词
Sub-THz; transition; substrate integrated waveguide (SIW); integrated passive device (IPD);
D O I
10.1109/SPI57109.2023.10145570
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
in this paper, a stacked transition of substrate-integrated waveguide (SIW)-to-SIW using flip-chip assembly technology is designed to connect two integrated passive device (IPD) substrates. A through-hole via structure constructed by through silicon vias (TSVs) of the IPD and gold bumps is appropriately designed to greatly improve the impedance bandwidth and reduce insertion loss. The bandwidth of the stacked transition is from 108.5 to 158 GHz (37.2%), and the de-embedded insertion loss is 0.28 dB at 133 GHz.
引用
收藏
页数:2
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