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- [3] Novel Building Blocks for PLL Using Complementary Logic in 28nm UTBB-FDSOI Technology 2017 IEEE 15TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2017, : 121 - 124
- [5] Study of SEU of 28nm UTBB-FDSOI Device by Heavy Ions and TCAD Simulation 2018 IEEE 2ND INTERNATIONAL CONFERENCE ON CIRCUITS, SYSTEM AND SIMULATION (ICCSS 2018), 2018, : 5 - 8
- [6] Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior 2014 36TH ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM (EOS/ESD), 2014,
- [7] Supply Voltage and Temperature Dependence of Single-Event Transient in 28-nm FDSOI MOSFETs SYMMETRY-BASEL, 2019, 11 (06):
- [8] Sensitive region of single-event transient in 22 nm FDSOI devices Guofang Keji Daxue Xuebao/Journal of National University of Defense Technology, 2024, 46 (02): : 146 - 152
- [9] Asynchronous 1R-1W Dual-Port SRAM by using Single-Port SRAM in 28nm UTBB-FDSOI Technology 2017 30TH IEEE INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE (SOCC), 2017, : 1 - 6
- [10] Process and Temperature Impact on Single-Event Transients in 28nm FDSOI CMOS 2017 IEEE 8TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS & SYSTEMS (LASCAS), 2017,