Unusual Contact Properties at the Metal-2D Perovskite Interface: The Crucial Role of Naturally Formed Buffer Layer in 2D Perovskite

被引:4
|
作者
Xu, Zhuo [1 ,2 ,3 ,4 ,5 ]
Chen, Ming [1 ,2 ,3 ,4 ,5 ]
Luo, Weidong [1 ,2 ,3 ,4 ,5 ]
Liu, Shengzhong Frank [1 ,2 ,3 ,4 ,5 ,6 ,7 ,8 ]
机构
[1] Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Natl Minist Educ, Xian 710119, Peoples R China
[2] Shaanxi Normal Univ, Shaanxi Key Lab Adv Energy Devices, Xian 710119, Peoples R China
[3] Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
[4] Shaanxi Normal Univ, Inst Adv Energy Mat, Xian 710119, Peoples R China
[5] Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China
[6] Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China
[7] Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
[8] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2023年 / 14卷 / 10期
基金
中国国家自然科学基金;
关键词
ORIGIN;
D O I
10.1021/acs.jpclett.3c00061
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The contact properties of two-dimensional (2D) perovskites with electrode can severely affect the device performance. In this work, we studied the contact properties of Cs2PbI2Cl2 with different metals (Al, Ag, Au, Pd, Ir, and Pt). A naturally formed buffer layer in Cs2PbI2Cl2 at the interface plays a crucial role in affecting the interface electronic properties. Two stacking patterns are constructed according to their symmetry. Typical Schottky contacts are observed in type II contacts with a strong Fermi level pinning (FLP) effect, while unusual FLP is observed in type I contacts. Remarkably, Ohmic contacts are obtained in Pd/Ir/Pt- Cs2PbI2Cl2 type I contacts. The influence of interfacial coupling behaviors to the FLP is revealed. This study shows that through judicious device architecture design, tunable interfacial tunneling and Schottky barriers can be achieved in metal-Cs2PbI2Cl2 contacts, which would provide guidance in developing more effective electronic nanodevices based on Cs2PbI2Cl2 and its analogues.
引用
收藏
页码:2606 / 2612
页数:7
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