Progress in Color Conversion Technology for Micro-LED

被引:32
|
作者
Ma, Teng [1 ]
Chen, Jun [2 ]
Chen, Ziyi [1 ]
Liang, Lumeng [2 ]
Hu, Jinning [1 ]
Shen, Weili [2 ]
Li, Zhenhua [1 ]
Zeng, Haibo [2 ]
机构
[1] Nanjing Univ Sci & Technol, Sch Sci, Nanjing 210094, Peoples R China
[2] Nanjing Univ Sci & Technol, Minist Ind & Informat Technol, Key Lab Adv Displaying Mat & Devices, Nanjing 210094, Peoples R China
基金
中国国家自然科学基金;
关键词
active matrix; color conversion layer; full color display; GaN-based chip; micro-light-emitting diode; passive matrix; LIGHT-EMITTING-DIODES; FULL-COLOR; HIGH-RESOLUTION; QUANTUM DOTS; OPTICAL-PROPERTIES; DISPLAY; FABRICATION; EMISSION; LAYER; CHIP;
D O I
10.1002/admt.202200632
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
With the continuous improvement of display demand in scientific research and the market, Micro-light-emitting diode (LED) has emerged as a new generation of display technology. With its excellent performance in color, resolution, life, and energy consumption, Micro-LED has shined brilliantly in the display market in recent years. This review introduces the methods for realizing Micro-LED full-color display through color conversion methods from the perspective of existing technologies, including the preparation of the Micro-LED chip, the research process from the early passive matrix driving method to the active matrix driving method, and the preparation method of the color conversion layer by inkjet printing, photolithography, and nanoimprinting. The current research achievements and challenges encountered in Micro-LED are systematically described. It is intended to provide readers and researchers with some inductive research materials and improvement ideas, and further promote the development of Micro-LED.
引用
收藏
页数:15
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