Tunable anomalous Hall effect and Curie temperature in perpendicular magnetic anisotropic lanthanum doped NiCo2O4 film

Perpendicular magnetic anisotropic NiCo2O4 (NCO) films show volatile physical properties due to the complicated ion occupation/valence disproportion, making it feasible to be manipulated. In this work, the tunable anomalous Hall effect is observed in high-quality lanthanum (La) doped NCO films grown by the off-axis RF sputtering technique. It reveals that the longitudinal resistance (R-xx) significantly increases as the growth of La doping level, while the Curie temperature (T-C) decreases with the rising of La doping level. A universal scaling law between the longitudinal conductance (sigma(xx)) and the anomalous Hall conductance (sigma(xy)), including the terms of dirty scaling mechanism, intrinsic contribution, and side jump, is proposed to explain the observed anomalous Hall effect. Additionally, an intrinsic linear relation between sigma(xx) and T-C is revealed. The evolution of anomalous Hall resistance (R-A), T-C, and R-xx is closely related to the complex valence state/occupation of Ni ions induced by La doping. This work provides a strategy to manipulate the physical properties of NCO film, making it a potential material for spintronic applications.