Tuning the magnetic interactions in van der Waals Fe3GeTe2 heterostructures: A comparative study of ab initio methods

被引:11
|
作者
Li, Dongzhe [1 ]
Haldar, Soumyajyoti [2 ]
Drevelow, Tim [2 ]
Heinze, Stefan [2 ,3 ]
机构
[1] Univ Toulouse, CNRS, CEMES, 29 Rue Jeanne Marvig, F-31055 Toulouse, France
[2] Univ Kiel, Inst Theoret Phys & Astrophys, Leibnizstr 15, D-24098 Kiel, Germany
[3] Univ Kiel, Kiel Nano Surface Interface Sci KiNSIS, Kiel, Germany
关键词
EXCHANGE INTERACTIONS; SKYRMION LATTICE; FERROMAGNETISM; CRYSTALS; DRIVEN;
D O I
10.1103/PhysRevB.107.104428
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the impact of mechanical strain, stacking order, and external electric fields on the magnetic interactions of a two-dimensional (2D) van der Waals heterostructure in which a 2D ferromagnetic metallic Fe3GeTe2 monolayer is deposited on germanene. Three distinct computational approaches based on ab initio methods are used, (i) the Green's function method, (ii) the generalized Bloch theorem, and (iii) the supercell approach, and a careful comparison is given. First, the shell-resolved exchange constants are calculated for the three Fe atoms within the unit cell of the freestanding Fe3GeTe2 monolayer. We find that the results obtained with approaches (i) and (ii) are in good qualitative agreement and also in good qualitative agreement with previously reported values. An electric field of E = +/- 0.5 V/angstrom applied perpendicular to the Fe3GeTe2/germanene heterostructure leads to significant changes in the exchange constants. We show that the Dzyaloshinskii-Moriya interaction (DMI) in Fe3GeTe2/germanene is mainly dominated by the nearest neighbors, resulting in a good quantitative agreement between approaches (i) and (ii). Furthermore, we demonstrate that the DMI is highly tunable by strain, stacking, and electric field, leading to a large DMI comparable to that of ferromagnetic/heavy metal interfaces, which have been recognized as prototypical multilayer systems to host isolated skyrmions. The geometrical change and hybridization effect explain the origin of the high tunability of the DMI at the interface. The electric-field-driven DMI obtained by approach (iii) is in qualitative agreement with the more accurate ab initio method used in approach (ii). However, the field effect on the DMI is overestimated by approach (iii) by about 50%. This discrepancy is attributed to the different implementations of the electric field and basis sets used in the ab initio methods applied in approaches (ii) and (iii). The magnetocrystalline anisotropy energy (MAE) can also be drastically changed by the application of compressive or tensile strain in the Fe3GeTe2/germanene heterostructure. The application of an electric field, in contrast, leads only to relatively small changes in the MAE for electric fields of up to 1 V/angstrom.
引用
收藏
页数:15
相关论文
共 50 条
  • [1] Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures
    Albarakati, Sultan
    Tan, Cheng
    Chen, Zhong-Jia
    Partridge, James G.
    Zheng, Guolin
    Farrar, Lawrence
    Mayes, Edwin L. H.
    Field, Matthew R.
    Lee, Changgu
    Wang, Yihao
    Xiong, Yiming
    Tian, Mingliang
    Xiang, Feixiang
    Hamilton, Alex R.
    Tretiakov, Oleg A.
    Culcer, Dimitrie
    Zhao, Yu-Jun
    Wang, Lan
    SCIENCE ADVANCES, 2019, 5 (07):
  • [2] Tunneling Spin Valves Based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals Heterostructures
    Wang, Zhe
    Sapkota, Deepak
    Taniguchi, Takashi
    Watanabe, Kenji
    Mandrus, David
    Morpurgo, Alberto F.
    NANO LETTERS, 2018, 18 (07) : 4303 - 4308
  • [3] Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures
    Lin, Hailong
    Yan, Faguang
    Hu, Ce
    Lv, Quanshan
    Zhu, Wenkai
    Wang, Ziao
    Wei, Zhongming
    Chang, Kai
    Wang, Kaiyou
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (39) : 43921 - 43926
  • [4] Exchange Bias in van der Waals CrCl3/Fe3GeTe2 Heterostructures
    Zhu, Rui
    Zhang, Wen
    Shen, Wei
    Wong, Ping Kwan Johnny
    Wang, Qixing
    Liang, Qijie
    Tian, Zhen
    Zhai, Ya
    Qiu, Cheng-wei
    Wee, Andrew T. S.
    NANO LETTERS, 2020, 20 (07) : 5030 - 5035
  • [5] Magnetic domain walls of the van der Waals material Fe3GeTe2
    Yang, Hung-Hsiang
    Bansal, Namrata
    Ruessmann, Philipp
    Hoffmann, Markus
    Zhang, Lichuan
    Go, Dongwook
    Li, Qili
    Haghighirad, Amir-Abbas
    Sen, Kaushik
    Blugel, Stefan
    Le Tacon, Matthieu
    Mokrousov, Yuriy
    Wulfhekel, Wulf
    2D MATERIALS, 2022, 9 (02)
  • [6] Hard magnetic properties in nanoflake van der Waals Fe3GeTe2
    Cheng Tan
    Jinhwan Lee
    Soon-Gil Jung
    Tuson Park
    Sultan Albarakati
    James Partridge
    Matthew R. Field
    Dougal G. McCulloch
    Lan Wang
    Changgu Lee
    Nature Communications, 9
  • [7] Hard magnetic properties in nanoflake van der Waals Fe3GeTe2
    Tan, Cheng
    Lee, Jinhwan
    Jung, Soon-Gil
    Park, Tuson
    Albarakati, Sultan
    Partridge, James
    Field, Matthew R.
    McCulloch, Dougal G.
    Wang, Lan
    Lee, Changgu
    NATURE COMMUNICATIONS, 2018, 9
  • [8] Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 van der Waals Heterostructures
    He, Xin
    Zhang, Chenhui
    Zheng, Dongxing
    Li, Peng
    Xiao, John Q.
    Zhang, Xixiang
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (07) : 9649 - 9655
  • [9] Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2
    Zeng, Xiangyu
    Zhang, Liang
    Zhang, Yang
    Yang, Fazhi
    Zhou, Liqin
    Wang, Yong
    Fang, Cizhe
    Li, Xiaoxi
    Zheng, Siying
    Liu, Yang
    Liu, Yan
    Wang, Xiaozhi
    Hao, Yue
    Han, Genquan
    APPLIED PHYSICS LETTERS, 2024, 125 (09)
  • [10] Surface magnetism in Fe3GeTe2 van der Waals ferromagnet
    Tyson, Trevor A.
    Amarasinghe, Sandun
    Abeykoon, A. M. Milinda
    Lalancette, Roger
    Du, Kai
    Fang, Xiaochen
    Cheong, Sang-W
    Al-Mahboob, Abdullah
    Sadowski, Jerzy T.
    2D MATERIALS, 2025, 12 (02):