With the increasing of dynamic random access memory's (DRAM) capacity, the refresh operation rapidly becomes a major concern to the performance of the current computational system. Moreover, conservative timing parameters adopted for access operations make an increasing amount of negative impact on system performance and energy efficiency. In this article, we propose an in-situ charge detection and adaptive data restoration DRAM (CDAR-DRAM) architecture, which can dynamically adjust the refresh rate and relax the constraints on access timing by removing pessimistic timing margins for PVT variations. CDAR-DRAM employs a low-cost skewed-inverter-based detector to monitor the bitline voltage in runtime and estimate real-time timing parameters of cells. Based on the detector, an adaptive refresh and restore scheme (CDAR-ref) is presented, which progressively reduces the refresh rate and partially restores cells' voltage just enough for cells with sufficient charge, thereby optimizing both refresh and restoration operations. Moreover, a supplementary adaptive access scheme (CDAR-acc) is presented, which detects the runtime charge level of recently accessed rows and reduces access latency aggressively, benefitting workloads in a single-core system and memory nonintensive workloads in a multicore system. CDAR's flexibility allows the two schemes to be combined. The evaluation shows that in an eight-core system, the combined scheme improves performance and energy efficiency by 15.2% and 22.6%, respectively.
