Eu based layered EuFAgX (X = S, Se and Te) magnetic semiconductors for optoelectronic and thermoelectric applications

Structural, optoelectronic, thermoelectric and magnetic properties of layered structured compounds EuFAgX (X = S, Se and Te) are investigated using density functional theory (DFT). Structural properties are in good agreement with the reported outcomes. Electronic properties shows that the understudy compounds are visible light active direct bandgap semiconductors. Electrical conductivity also reveals the semiconducting nature of these compounds. This study reveals that the substitution of Te by S causes reduction in band gape. The outcome demonstrates that EuFAgB (B = S, Se and Te) compounds are optically dynamic in the visible region and suitable for optoelectronic devices and are active aspirants for solar cell applications. Based on their thermoelectric characteristics, they are effective thermoelectric materials for thermoelectric power production for variable systems, nano-thermocouples and thermoelectric generation. Understudy compounds are A-type anti-ferromagnetic, as shown by magnetic susceptibility and magnetic ground state energy. Magnetic probes cannot read anti-ferromagnetic moments because of their anti-ferromagnetic structure, and data is unaffected by magnetic fields. Therefore, these compounds may be excellent candidates for magnetic cloaking devices.