Silicone-Based Thermally Conductive Gel Fabrication via Hybridization of Low-Melting-Point Alloy-Hexagonal Boron Nitride-Graphene Oxide

Thermal contact resistance between the microprocessor chip and the heat sink has long been a focus of thermal management research in electronics. Thermally conductive gel, as a thermal interface material for efficient heat transfer between high-power components and heat sinks, can effectively reduce heat accumulation in electronic components. To reduce the interface thermal resistance of thermally conductive gel, hexagonal boron nitride and graphene oxide were hybridized with a low-melting-point alloy in the presence of a surface modifier, humic acid, to obtain a hybrid filler. The results showed that at the nanoscale, the low-melting-point alloy was homogeneously composited and encapsulated in hexagonal boron nitride and graphene oxide, which reduced its melting range. When the temperature reached the melting point of the low-melting-point alloy, the hybrid powder exhibited surface wettability. The thermal conductivity of the thermally conductive gel prepared with the hybrid filler increased to 2.18 W/(m center dot K), while the corresponding thermal contact resistance could be as low as 0.024 degrees C/W. Furthermore, the thermal interface material maintained its excellent electric insulation performance, which is necessary for electronic device applications.