Study of High Frequency Nonlinear Memory Effect on Doherty Power Amplifiers Linearization Performances for 5G Applications

被引：1
|
作者：
Quindroit, Christophe [1 ]
Rochas, Pablo [1 ]
Monsauret, Nelsy [1 ]
Courty, Alexis [1 ]
机构：
[1] Ampleon, Colomiers, France
来源：
2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS | 2023年
关键词：
MMICs; power amplifiers; linearization; behavioral model; memory effects;
D O I：
10.1109/PAWR56957.2023.10046283
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a method to evaluate the impact of RF dispersions of a Doherty power amplifier (PA) on its linearizability. From the PA behavioral model, considering exclusively the nonlinear high-frequency (HF) memory effects, the linearization performance is evaluated. The behavioral model is modified to artificially reduce and increase the band of the RF dispersions and evaluate the impact on the linearity. The purpose of these simulations is to advise the designer of the required RF bandwidth to achieve the mandatory linearity performance. The designer will then adjust its circuit accordingly to maximize the efficiency-linearity trade-off.
引用
收藏
页码：49 / 52
页数：4
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