Magnetic doping in transition metal dichalcogenides

被引:5
|
作者
Coelho, Paula Mariel [1 ]
机构
[1] Univ North Florida, Dept Phys, Jacksonville, FL 32224 USA
关键词
transition metal dichalcogenides; doping; magnetism; defects; 2D materials; BAND-GAP; MONOLAYER; FERROMAGNETISM; DEFECTS; SINGLE; MOTE2; MOSE2; WS2; GROWTH;
D O I
10.1088/1361-648X/ad271b
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Transition metal dichalcogenides (TMDCs) are materials with unique electronic properties due to their two-dimensional nature. Recently, there is a large and growing interest in synthesizing ferromagnetic TMDCs for applications in electronic devices and spintronics. Apart from intrinsically magnetic examples, modification via either intrinsic defects or external dopants may induce ferromagnetism in non-magnetic TMDCs and, hence expand the application of these materials. Here, we review recent experimental work on intrinsically non-magnetic TMDCs that present ferromagnetism as a consequence of either intrinsic defects or doping via self-flux approach, ion implantation or e-beam evaporation. The experimental work discussed here is organized by modification/doping mechanism. We also review current work on density functional theory calculations that predict ferromagnetism in doped systems, which also serve as preliminary data for the choice of new doped TMDCs to be explored experimentally. Implementing a controlled process to induce magnetism in two-dimensional materials is key for technological development and this topical review discusses the fundamental procedures while presenting promising materials to be investigated in order to achieve this goal.
引用
收藏
页数:24
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