Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) (vol 122, 243503, 2023)

被引：0

作者：

Tetzner, H. ^{[1
]}

Seifert, W. ^{[1
]}

Skibitzki, O. ^{[1
]}

Yamamoto, Y. ^{[1
]}

Lisker, M. ^{[1
]}

Mirza, M. M. ^{[2
]}

Fischer, I. A. ^{[3
]}

Paul, D. J. ^{[2
]}

Seta, Monica De ^{[4
]}

Capellini, G. ^{[1
,4
]}

机构：

[1] IHP Leibniz Inst Innovat Mikroelektron, Technol Pk 25, Frankfurt, Germany

[2] Univ Glasgow, James Watt Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland

[3] BTU Cottbus Senftenberg, Expt Phys & Funkt Mat, Erich Weinert Str 1, D-03046 Cottbus, Germany

[4] Univ Roma Tre, Dipartimento Sci, Viale G Marconi 446, I-00146 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 06期

关键词：

D O I：

10.1063/5.0169378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：1

共 42 条

[1] Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001)
Tetzner, H.
Seifert, W.
Skibitzki, O.
Yamamoto, Y.
Lisker, M.
Mirza, M. M.
Fischer, I. A.
Paul, D. J.
De Seta, Monica
Capellini, G.
APPLIED PHYSICS LETTERS, 2023, 122 (24)
[2] Erratum: Unintentional p-type conductivity in intrinsic Ge-rich SiGe/Ge heterostructures grown on Si(001) (Applied Physics Letters (2023) (243503) DOI: 10.1063/5.0152962)
Applied Physics Letters, 2023, 123 (06):
[3] Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)
Tetzner, H.
Fischer, I. A.
Skibitzki, O.
Mirza, M. M.
Manganelli, C. L.
Luongo, G.
Spirito, D.
Paul, D. J.
De Seta, M.
Capellini, G.
APPLIED PHYSICS LETTERS, 2021, 119 (15)
[4] Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(001)
Thumfart, L.
Carrete, J.
Vermeersch, B.
Ye, N.
Truglas, T.
Feser, J.
Groiss, H.
Mingo, N.
Rastelli, A.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 51 (01)
[5] Relaxation Delay of Ge-Rich Epitaxial SiGe Films on Si(001)
Salomon, Andreas
Aberl, Johannes
Vukusic, Lada
Hauser, Manuel
Fromherz, Thomas
Brehm, Moritz
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2022, 219 (17):
[6] Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique
Lee, Junil
Lee, Ryoongbin
Kim, Sihyun
Lee, Kitae
Kim, Hyun-Min
Kim, Soyoun
Kim, Munhyeon
Kim, Sangwan
Lee, Jong-Ho
Park, Byung-Gook
SOLID-STATE ELECTRONICS, 2020, 164
[7] Lateral Ge/SiGe/Si hetero-channel p-type MOSFETs
Chen, Chia-Yu
Liu, Yang
Kim, Jongchol
Dutton, Robert W.
2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, 2009, : 21 - 22
[8] Lateral conductivity of p-type doped Si/Ge island structures
V. A. Gergel’
T. M. Burbaev
V. A. Kurbatov
A. O. Pogosov
M. Rzaev
N. N. Sibel’din
I. M. Shcheleva
M. N. Yakupov
Semiconductors, 2007, 41 : 818 - 821
[9] RBS analysis of MBE grown SiGe/(001)Si heterostructures with thin high Ge content SiGe channels for HMOS transistors
Barradas, NP
Sequeira, AD
Franco, N
Myronov, M
Mironov, OA
Phillips, PJ
Parker, EHC
MODERN PHYSICS LETTERS B, 2001, 15 (28-29): : 1297 - 1304
[10] LOW-TEMPERATURE THERMAL CONDUCTIVITY OF P-TYPE GE AND SI
SUZUKI, K
MIKOSHIBA, N
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2550 - +

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