975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings

被引:0
|
作者
Liu, Zhenwu [1 ,2 ]
Zhong, Li [1 ,2 ]
Liu, Suping [1 ]
Ma, Xiaoyu [1 ,2 ]
机构
[1] Chinese Acad Sci, Natl Engn Res Ctr Optoelect Devices, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
基金
国家重点研发计划;
关键词
laser diodes; distributed Bragg reflector; high order gratings; high power laser diodes; narrow spectrum width;
D O I
10.1088/1674-4926/45/3/032401
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calculated using the 2D finite difference time domain (FDTD) algorithm and the scattering matrix method (SMM). The periods and etch depth of the grating parameters have been optimized. A board area laser diode (BA-LD) with high-order diffraction gratings has been designed and fabricated. At output powers up to 10.5 W, the measured spectral width of full width at half maximum (FWHM) is less than 0.5 nm. The results demonstrate that the designed high-order surface gratings can effectively narrow the spectral width of multimode semiconductor lasers at high output power.
引用
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页数:7
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