Update on main chain scission resists in Zeon for high-NA EUV lithography

被引：0
|
作者：
Shirotori, Akihide [1 ,2 ]
Oda, Yuji [1 ]
Taguchi, Kazunori [1 ]
Yeh, Sin Fu [1 ,2 ]
Suh, Hyo Seon [2 ]
De Simone, Danilo. [2 ]
Vandenberghe, Geert [2 ]
Sanuki, Hideaki [1 ]
机构：
[1] Zeon Corp, 1-6-2 Marunouchi,Chiyoda Ku, Tokyo 1008246, Japan
[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
来源：
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2023 | 2023年 / 12750卷
关键词：
D O I：
10.1117/12.2686602
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this work, we introduce main chain scission resists with new concept for High-NA's generation and report their lithography performance. Zeon has developed a new resist (ZR12A, R&D sample) in order to improve both resolution and lithography performance because conventional Zeon resists generated worse resolution and kissing(C/H), pinching(L/S) defects at tight pitch by top loss. The concreate approaches in order to improve the challenges are that to make scission reaction efficient and to get developability at exposed area higher in changing both monomers and functional groups. Zeon aims to make clear threshold between exposed and un-exposed area and improve low contrast and sensitivity at tight patterns especially. The lithography performance of ZR12A with their approaches were able to improve LCDU and margin with low LCDU on litho-performance compared to ZER02#04DM. Additionally, ZR12A has good etching resistance and can improve LCDU in AEI as well at this paper.
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页数：9
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