Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

被引：0

作者：

Amri, Chohdi ^{[1
,2
]}

Liu, Shengzhong ^{[3
,4
]}

Najar, Adel ^{[1
]}

机构：

[1] United Arab Emirates Univ, Coll Sci, Dept Phys, Al Ain, U Arab Emirates

[2] Ctr Rech & Technol Energie, Lab Photovolta, Technopole Borj Cedria, BP 95, Hammam Lif 2050, Tunisia

[3] Chinese Acad Sci, Dalian Inst Chem Phys, iChEM, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China

[4] Shaanxi Normal Univ, Sch Mat Sci & Engn, Key Lab Appl Surface & Colloid Chem, Minist Educ,Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China

来源：

NANOMATERIALS | 2023年 / 13卷 / 10期

关键词：

vapor phase-silver assisted chemical etching; porous silicon; photoluminescence; quantum confinement effect; oxide layer; POROUS SILICON; PHOTOLUMINESCENCE; EMISSION;

D O I：

10.3390/nano13101602

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.

引用

页数：11

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