Performance Analysis of Metal-Ferroelectric-Insulator-Semiconductor Negative Capacitance FET for Various Channel Materials

With the advancement in integrated circuit (IC) miniaturization, limiting the power usage has become a significant issue for both academia and industrial researchers. Negative capacitance field-effect transistors (NCFETs) have recently grabbed a lot of attention compared to several established ultralow-power devices with sub-threshold swing (SS) less than 60 mV/decade. In every device, the channel plays a crucial role in the transport mechanisms of the device, thus impacting its performance and operational attributes. In this work, we analyze the effects of different channel materials such as gallium nitride (GaN), gallium arsenide (GaAs), and silicon (Si) on the transfer characteristics of single-gate NCFET in the presence of spacer. In addition, the effects of these materials on the trans-conductance are also studied. The simulation results reveal that the GaAs-based channel provides a better ON-OFF current (I-ON-I-OFF) ratio and trans-conductance, but SS performance degrades badly. Furthermore, it has been observed that the Si-based channel offers improved SS in comparison with the other two materials. Several key performance metrics of the device such as ON-current, OFF-current, and SS are investigated, and the comparison of various parameters of the device based on different channel materials is summarized.