139 nm tuning range, high speed wavelength modulation, and high output power up to 60 mW from a single gain, two-ring vernier external cavity laser

被引：0

作者：

Tsong, Wilson ^{[1
]}

van den Vlekkert, Ian ^{[1
]}

Musa, Sami ^{[1
]}

Frentrop, Raimond N. ^{[2
]}

Schilder, Noor A. ^{[2
]}

Hoekman, Marcel ^{[2
]}

Meijerink, Arjan ^{[2
]}

Klein, Edwin J. ^{[2
]}

Geskus, Dimitri ^{[1
]}

机构：

[1] Chilas BV, Luchthavenweg 10, NL-5657 EB Eindhoven, Netherlands

[2] LioniX Int BV, Hengelosestr 500, NL-7521 AN Enschede, Netherlands

来源：

INTEGRATED OPTICS: DEVICES, MATERIALS, AND TECHNOLOGIES XXVII | 2023年 / 12424卷

关键词：

140.0140 Lasers and laser optics; 140.3600; Lasers; tunable; 140.5960 Semiconductor lasers; 130.3120 Integrated optics devices; 140.3425 Laser stabilization; 060.2630 Frequency modulation;

D O I：

10.1117/12.2650624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a compact PIC external cavity laser consisting of a hybrid integrated InP gain section and SiN tunable mirror, with a superior combination of characteristics. The laser has shown a narrow linewidth < 5 kHz, broad tuning range of 140 nm over the S-, C- and L- band, from 1473 nm to 1612 nm, and high single mode output power of 60 mW. The laser frequency can be modulated at frequencies > 10 MHz having a wavelength modulation depth of > 20 MHz.

引用

页数：5

共 5 条

[1] High power and wide tuning range external cavity wavelength tunable laser
Kudo, Koji
Sato, Kenji
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 594 - 597
[2] Design of Vernier ring for external cavity laser with high side mode suppression ratio and wide tuning range
Chen, Licheng
Yu, Lei
Ma, Pengfei
Wang, Zheng
Yang, Yibo
Tian, Jiachen
Wang, Pengfei
Zhang, Yejin
Pan, Jiaoqing
OPTICS COMMUNICATIONS, 2024, 554
[3] 202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser
Fedorova, K. A.
Cataluna, M. A.
Krestnikov, I.
Livshits, D.
Rafailov, E. U.
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 172 - +
[4] Ultrabroad tuning range (100 nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well
Podoskin, Alexandr
Golovin, Vyacheslav
Gavrina, Polina
Veselov, Dmitriy
Zolotarev, Vasiliy
Shamakhov, Viktor
Nikolaev, Dmitrii
Leshko, Andrey
Slipchenko, Sergey
Pikhtin, Nikita
Kopev, Petr
APPLIED OPTICS, 2019, 58 (33) : 9089 - 9093
[5] Cavity mode-gain peak tradeoff for 1320-nm wafer-fused VCSELs with 3-mW single-mode emission power and 10-Gb/s modulation speed up to 70°C
Mircea, A.
Caliman, A.
Iakovlev, V.
Mereuta, A.
Suruceanu, G.
Berseth, C. -A.
Royo, P.
Syrbu, A.
Kapon, E.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (2-4) : 121 - 123

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