Degradation characteristics and equivalent analysis of InGaAsP space solar cells under proton and neutron irradiation

被引:4
|
作者
Chen, Feida [1 ]
Zong, Mingjie [1 ]
Tan, Zhixin [2 ,3 ]
Tang, Xiaobin [1 ,4 ]
机构
[1] Nanjing Univ Aeronaut & Astronaut, Dept Nucl Sci & Technol, Nanjing 211106, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
[3] Spallat Neutron Source Sci Ctr, Dongguan 523803, Peoples R China
[4] Minist Ind & Informat Technol, Key Lab Nucl Technol Applicat & Radiat Protect Ast, Nanjing 211106, Peoples R China
关键词
InGaAsP solar cell; Proton and neutron irradiation; Radiation damage; Diffusion length damage coefficient; Equivalent displacement damage dose model; ELECTRON;
D O I
10.1016/j.microrel.2023.115249
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of 2 MeV, 30 MeV proton and neutron irradiation on the performance of InGaAsP single junction solar cells were investigated. The degradation of electrical and optical properties was studied by experiment, such as IV curve, external quantum efficiency, photoluminescence (PL) and scanning electron microscopy (SEM). Results show that the performance parameters of the solar cell degrade seriously with the increasing of the displacement damage dose. The PL results indicate that irradiation has a destructive effect on the photoelectric properties of materials. The carrier parameters were quantitatively calculated according to the PL normalized peak. The minority carrier lifetime attenuation model and equivalent displacement damage model were established to evaluate the on-orbit behavior of the InGaAsP solar cell.
引用
收藏
页数:12
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