Modulation Instability in Driven VCSELs Above Threshold

被引:1
|
作者
Yarunova, E. A. [1 ,2 ]
Krents, A. A. [1 ,2 ]
Molevich, N. E. [1 ,2 ]
机构
[1] Samara Natl Res Univ, Samara 443086, Russia
[2] Lebedev Phys Inst, FIAN branch Samara, Samara 443110, Russia
关键词
modulation instability; Henry factor; VCSEL; external optical injection; CAVITY SOLITONS; SEMICONDUCTOR; COLLAPSE; LASERS; LIGHT;
D O I
10.3103/S1060992X2305020X
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Transverse dynamics of a broad-area semiconductor surface-emitting laser with a vertical resonator (VCSEL) with.xternal optical injection was investigated above threshold. It is obtained that two types of instabilities can develop in system: Turing and Hopf instabilities. Turing instability in turn can be subdivided into plane-wave instability (PWI) and modulation instability (MI). We found some sets of system parameters where the steady-state curve of the homogeneous solution can be bistable or monostable. Modulation instability can lead to the development of spatial patterns, which was obtained.
引用
收藏
页码:S46 / S53
页数:8
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