Doping Properties of GaAs Film Grown by Molecular Beam Epitaxy

In order to make GaAs-based devices widely applicated in high-frequency and mobile communication, we use molecular beam epitaxy to grow GaAs thin films, and achieve the enhancement of GaAs thin film mobility and the increase of band width by doping control techniques. In our experiments, we use Si as dopant source to obtain GaAs thin films with high doping concentration, and we prepare and test the samples with different dopant source temperatures to achieve the regulation of the band gap, film luminescence intensity, surface roughness and mobility. The doping concentration of the prepared GaAs thin film layer was achieved at 1250 degrees C with Si doping source of 2.07 x 1018 cm(-3), the mobility was 2097 cm(2)/V center dot s, and the photoluminescence(PL) intensity was increased by 100 times compared with the non-doped film.