Strong piezoelectricity of the nm-thick flexible Hf0.5Zr0.5O2 ferroelectric film

被引：6
|
作者：
Liu, Nannan [1 ]
Zhang, Xinping [1 ]
Ding, Yecheng [1 ]
Wang, Yaojin [1 ]
Lu, Xubing [2 ]
Yuan, Guoliang [1 ]
Liu, Jun-Ming [3 ,4 ]
机构：
[1] Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, Nanjing 210094, Peoples R China
[2] South China Normal Univ, Inst Adv Mat, South China Acad Adv Optoelect, Guangzhou 510006, Peoples R China
[3] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[4] Nanjing Univ, Sch Phys, Nanjing 210093, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2023年 / 968卷
基金：
中国国家自然科学基金;
关键词：
Flexible oxide films; High piezoelectricity; ENHANCED FERROELECTRICITY;
D O I：
10.1016/j.jallcom.2023.172083
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Integrated nanoelectromechanical systems (NEMS) exhibit enormous potential for replacing current microelectromechanical systems in various fields, such as 5G/6G wireless communication, in the future. However, their advancement is impeded by the challenge of achieving nanometer-thick ferroelectric oxide films with a high piezoelectric coefficient of d33. Herein, the nm-thick flexible Hf0.5Zr0.5O2 (HZO) films were deposited on mica substrates, and they exhibited a remnant polarization of >= 8.1 mu C/cm2 at 25-320 degrees C and a high d33 value of 37.8 pC/N at 25 degrees C. After the HZO films with inter-digitated electrodes were fully polarized, the flexible HZO film with a dynamic bending strain of 0.102 % at 4 Hz produced an open-circuit voltage of 1.1 V. This HZO film with strong piezoelectricity can promote the development of novel NEMS and flexible piezoelectric sensors.
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收藏
页数：8
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