Intrinsically Stretchable Subthreshold Organic Transistors for Highly Sensitive Low-Power Skin-Like Active-Matrix Temperature Sensors

被引:11
|
作者
Kim, Jun Su [1 ]
Jeong, Min Woo [1 ]
Nam, Tae Uk [1 ]
Vo, Ngoc Thanh Phuong [1 ]
Jung, Kyu Ho [1 ]
Lee, Tae Il [2 ]
Oh, Jin Young [1 ]
机构
[1] Kyung Hee Univ, Dept Chem Engn, Integrated Engn Program, Yongin 17104, Gyeonggi, South Korea
[2] Gachon Univ, Dept Mat Sci & Engn, Seongnam 13120, Gyeonggi, South Korea
基金
新加坡国家研究基金会;
关键词
active matrix; intrinsically stretchable electronics; low-power consumption; subthreshold region; temperature sensors; FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR-FILMS; TRANSPORT; AMMONIA;
D O I
10.1002/adfm.202305252
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Stretchable wearable sensors ultimately require low power consumption and high response to physiological signals with skin conformability. However, power-response tradeoff and strain-dependent sensing instability remain key challenges for electronic skin (e-skin) sensors. Herein,an intrinsically stretchable organic subthreshold transistor operating at low voltage (-1 V) is presented, leading to ultralow power consumption (<1 nW) for highly sensitive skin-like temperature sensory devices. The highly temperature-dependent hopping transport of the fully stretchable subthreshold transistor exhibits high-temperature sensitivity (9.4% degrees C-1) and excellent sensing stability up to 100% strain. A skin-like subthreshold organic transistor active-matrix array is successfully fabricated that sensed the surface temperature distribution under a 3D deformation.
引用
收藏
页数:8
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