Unraveling the Origin of Donor-Like Effect in Bismuth-Telluride-Based Thermoelectric Materials

被引:20
|
作者
Liu, Feng [1 ]
Zhang, Min [1 ]
Nan, Pengfei [2 ]
Zheng, Xin [1 ]
Li, Yuzheng [1 ]
Wu, Kang [2 ]
Han, Zhongkang [1 ]
Ge, Binghui [2 ]
Zhao, Xinbing [1 ]
Fu, Chenguang [1 ]
Zhu, Tiejun [1 ,3 ]
机构
[1] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310058, Peoples R China
[2] Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Key Lab Struct & Funct Regulat Hybrid Mat,Minist E, Hefei 230601, Peoples R China
[3] Shanxi Zheda Inst Adv Mat & Chem Engn, Taiyuan 030000, Shanxi, Peoples R China
来源
SMALL SCIENCE | 2025年 / 5卷 / 03期
关键词
bismuth-tellurides; donor-like effect; point defects; thermoelectric properties; DEFECTS; ALLOYS; DEFORMATION;
D O I
10.1002/smsc.202300082
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The donor-like effect, depicting the uncontrollable increase of electron density that can significantly alter the thermoelectric performance of both p-type and n-type polycrystalline Bi2Te3-based materials, has long been an intriguing phenomenon, while its origin is still elusive. Herein, it is found that different from the common argument, the donor-like effect in Bi2Te3-based polycrystals is a result of the oxygen-adsorption-induced evolution of the point defects. The dominant point defect in stoichiometric zone-melted Bi2Te3 ingot is the acceptor-like Bi & PRIME;Te. During the fabrication of high-strength polycrystals, the exposure of the powders to the air leads to their absorption of oxygen and the formation of secondary phase Bi2TeO5 in the following sintering process. This brings about a change of local chemical equilibrium and promotes the evolution of the intrinsic point defect from acceptor-like Bi & PRIME;Te to donor-like TeBi & BULL;. Notably, if the fabrication process is strictly controlled to minimize oxygen adsorption, the evolution of the point defects will be avoided, whereby the donor-like effect disappears. Consequently, a reproducible high zT value of 1.0 at 325 K can be achieved in Bi2Te2.7Se0.3-based polycrystals. These results highlight the importance of understanding the evolution of point defects, which is crucial for developing high-performance Bi2Te3-based polycrystals and corresponding fabrication processes.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] Innovative Design of Bismuth-Telluride-Based Thermoelectric Transistors
    Deng, Hao
    Nan, Bohang
    Xu, Guiying
    MATERIALS, 2023, 16 (16)
  • [2] Point Defect Engineering of High-Performance Bismuth-Telluride-Based Thermoelectric Materials
    Hu, Lipeng
    Zhu, Tiejun
    Liu, Xiaohua
    Zhao, Xinbing
    ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (33) : 5211 - 5218
  • [3] Advances in bismuth-telluride-based thermoelectric devices: Progress and challenges
    Cao, Tianyi
    Shi, Xiao-Lei
    Li, Meng
    Hu, Boxuan
    Chen, Wenyi
    Liu, Wei-Di
    Lyu, Wanyu
    MacLeod, Jennifer
    Chen, Zhi-Gang
    ESCIENCE, 2023, 3 (03):
  • [4] Design study of Bismuth-Telluride-based thermoelectric generators based on thermoelectric and mechanical performance
    Jia, Xiaodong
    Guo, Qiuting
    ENERGY, 2020, 190
  • [5] Topological Thermoelectric Materials Based on Bismuth Telluride
    L. N. Lukyanova
    O. A. Usov
    M. P. Volkov
    I. V. Makarenko
    Nanobiotechnology Reports, 2021, 16 : 282 - 293
  • [6] Topological Thermoelectric Materials Based on Bismuth Telluride
    Lukyanova, L. N.
    Usov, O. A.
    Volkov, M. P.
    Makarenko, I., V
    NANOBIOTECHNOLOGY REPORTS, 2021, 16 (03) : 282 - 293
  • [7] Control of donor-like effect in V2VI3 polycrystalline thermoelectric materials
    Hu, Lipeng
    Guo, Yangming
    Li, Junqin
    Ao, Weiqin
    Liu, Fusheng
    Zhang, Chaohua
    Li, Yu
    Zeng, Xierong
    MATERIALS RESEARCH BULLETIN, 2018, 99 : 377 - 384
  • [8] Numerical Simulation of Performance and Thermomechanical Behavior of Thermoelectric Modules with Segmented Bismuth-Telluride-Based Legs
    M. Picard
    S. Turenne
    D. Vasilevskiy
    R. A. Masut
    Journal of Electronic Materials, 2013, 42 : 2343 - 2349
  • [9] Thermomechanical characterization of bismuth telluride based thermoelectric materials
    Brostow, W
    Menard, KP
    White, JB
    THERMOELECTRIC MATERIALS 2001-RESEARCH AND APPLICATIONS, 2001, 691 : 425 - 430
  • [10] Numerical Simulation of Performance and Thermomechanical Behavior of Thermoelectric Modules with Segmented Bismuth-Telluride-Based Legs
    Picard, M.
    Turenne, S.
    Vasilevskiy, D.
    Masut, R. A.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (07) : 2343 - 2349