An Account of Natural Material-Based Nonvolatile Memory Device

被引:5
|
作者
Rahman, Farhana Yasmin [1 ]
Bhattacharjee, Debajyoti [1 ]
Hussain, Syed Arshad [1 ]
机构
[1] Thin Film & Nanosci Lab, Dept Phys, West Tripura,Suryamaninagar, Agartala 799022, Tripura, India
关键词
Natural material; Biodegradable; RRAM; WORM; THIN-FILM; BEHAVIOR; MECHANISMS; CONDUCTION; REDOX;
D O I
10.1007/s40010-023-00830-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The development in electronic sector has brought a remarkable change in the lifestyle of mankind. At the same time, this technological advancement results in adverse effect on environment due to the use of toxic and non-degradable materials in various electronic devices. With the emergence of environmental problems, the green, reprogrammable, biodegradable, sustainable and environmental-friendly electronic devices have become one of the best solutions for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Natural material has emerged as the promising candidate for the next generation of electronic devices due to its easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This review targets the characteristics, advancements, role, limitations, and prospects of using natural materials as the functional layer of a resistive switching memory device with a primary focus on the switching/memory properties. Among the available memory devices, resistive random access memory, write once read many unipolar memory, etc., devices have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. The motivation behind this work is to promote the use of natural materials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic devices.
引用
收藏
页码:497 / 510
页数:14
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