0.86 kV p-Si/(001)-Ga2O3 Heterojunction Diode

In this work, we report a single crystalline p-Si/(001) beta-Ga2O3 heterojunction diode fabricated using semiconductor grafting technology. The diode showed a breakdown voltage (V-br) of similar to 0.86 kV, which is the highest breakdown voltage reported for Si/(001) Ga2O3 heterojunction diode to date. The average peak electric field (E-m) was calculated to be >2 MV/cm near breakdown, while the specific on resistance (R-on,R-sp) was measured to be 7.7 mQ<middle dot>cm(2), corresponding to a power figure of merit of similar to 96 MW/cm(2). Catastrophic breakdown is confirmed by optical microscope inspection. The turn on voltage (Von) of the diode was measured to be around 1.12 V, the on-off ratio was calculated to be 9 x 10(9) at -2 and 2 V, and the ideality factor was extracted to be approximately 1.18. The band structure of the diode was analyzed, and C -V measurements were also performed to understand the trapping behavior at the Si/Ga2O3 interface.