Optimization of chemical mechanical polishing of (010) β-Ga2O3

被引:7
|
作者
Liao, Michael E. E. [1 ]
Huynh, Kenny [1 ]
Matto, Lezli [1 ]
Luccioni, Dorian P. [1 ]
Goorsky, Mark S. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
来源
关键词
MATERIAL REMOVAL; PARTICLE-SIZE; DEPENDENCIES; WAFER; MODEL;
D O I
10.1116/6.0002241
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Smooth (< 0.5 nm rms) and subsurface damage-free (010) beta-Ga2O3 was achieved with low-pressure chemical mechanical polishing. An applied pressure of 1 kPa along with colloidal silica and poromeric polyurethane polishing pads rotating at 30 rpm was found to be the optimal polishing parameters for (010) beta-Ga2O3. Using higher pressures typically employed in the current literature induced subsurface damage in the substrates. Diffuse scatter intensity of triple-axis x-ray rocking curves was used to determine the presence of subsurface lattice damage, which was quantified by measuring peak widths below the half maximum (i.e., FWXM where X < 0.5). The initially rough surfaces of (010) beta-Ga2O3 substrates due to wafer slicing and grinding were lapped and polished. A 5 mu m Al2O3 slurry followed by a 0.3 mu m Al2O3 slurry was used as the primary lap material removal step. The material removal rates were & SIM;20 and & SIM;9 mu m/h, respectively. Then, chemical mechanical polishing was performed using colloidal alumina followed by colloidal silica. The removal rates were & SIM;1.3 and & SIM;0.4 mu m/h, respectively. Only colloidal silica showed the complete removal of subsurface damage. The final (020) beta-Ga2O3 rocking curve FWHM was & SIM;13 & DPRIME; and FW(0.001)M was & SIM;120 & DPRIME;, which matches the widths of commercially available pristine (010) beta-Ga2O3. A final cleaning step using dilute bleach and dilute citric acid to remove residual silica slurry particles from the surface was demonstrated. Published under an exclusive license by AIP Publishing.
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页数:9
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