Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

被引：1

作者：

Tyaginov, Stanislav ^{[1
]}

Bury, Erik ^{[1
]}

Grill, Alexander ^{[1
]}

Yu, Zhuoqing ^{[2
]}

Makarov, Alexander ^{[1
]}

De Keersgieter, An ^{[1
]}

Vexler, Mikhail ^{[3
]}

Vandemaele, Michiel ^{[1
]}

Wang, Runsheng ^{[2
]}

Spessot, Alessio ^{[1
]}

Chasin, Adrian ^{[1
]}

Ben Kaczer ^{[1
]}

机构：

[1] Imec, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[3] AF Ioffe Inst, Polytechnicheskaya 26, St Petersburg 194021, Russia

来源：

MICROMACHINES | 2023年 / 14卷 / 11期

关键词：

hot-carrier degradation; compact physics model; secondary carriers; impact ionization; interface traps; carrier transport; SPHERICAL-HARMONICS EXPANSION; INDUCED MOSFET DEGRADATION; ELECTRON; RELIABILITY; DEFECTS; TRANSISTORS; IMPACT; CHARGE; GATE; MECHANISMS;

D O I：

10.3390/mi14112018

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs and relatively high Vds. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.

引用

页数：18

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