Universality of trap-induced mobility fluctuations between 1/f noise and random telegraph noise in nanoscale FD-SOI MOSFETs

被引：1

作者：

Gauthier, Owen ^{[1
,2
]}

Haendler, Sebastien ^{[1
]}

Rafhay, Quentin ^{[2
]}

Theodorou, Christoforos ^{[2
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France

[2] Univ Grenoble Alpes, Univ Savoie Mont Blanc, CNRS, Grenoble INP,IMEP LAHC, F-38000 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 23期

关键词：

LOW-FREQUENCY NOISE; IMPACT; VARIABILITY; EXTRACTION; AMPLITUDE; MODEL;

D O I：

10.1063/5.0152734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low frequency noise (LFN) and random telegraph noise (RTN) are investigated statistically on nanoscale MOSFETs of 28 nm fully depleted silicon-on-insulator technology. The analysis reveals that the mean noise level is well described by the carrier number fluctuations with a correlated mobility fluctuations model. As for the RTN, it is shown that the mean amplitude of signals is driven by correlated mobility fluctuations in strong inversion. The comparison between the extracted parameters of the LFN and RTN analysis demonstrates that the remote Coulomb scattering impact due to the trapped and detrapped charges remains the same on average for this technology, whether it is the average noise spectrum of all devices or the average amplitude of the detected RTN signals.

引用

页数：5

共 23 条

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