High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications

被引：3

作者：

Ahn, DaeHwan ^{[1
]}

Jeon, Sunghan ^{[1
,2
]}

Suh, Hoyoung ^{[1
]}

Woo, Seungwan ^{[1
]}

Chu, Rafael Jumar ^{[1
]}

Jung, Daehwan ^{[1
]}

Choi, Won Jun ^{[1
]}

Park, Donghee ^{[1
]}

Song, Jin-Dong ^{[1
]}

Choi, Woo-Young ^{[2
]}

Han, Jae-Hoon ^{[1
]}

机构：

[1] Korea Inst Sci & Technol KIST, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 03722, South Korea

来源：

PHOTONICS RESEARCH | 2023年 / 11卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

CRITICAL-LAYER THICKNESS; EPITAXIAL-GROWTH; TRANSISTORS; TRANSPORT; FUTURE; GUIDE;

D O I：

10.1364/PRJ.491498

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Low-intensity light detection necessitates high-responsivity photodetectors. To achieve this, we report In0.53Ga0.47As/InAs/In0.53Ga0.47As quantum well (InAs QW) photo-field-effect-transistors (photo-FETs) inte-grated on a Si substrate using direct wafer bonding. Structure of the InAs QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In0.53Ga0.47As, while suppressing the generation of defects due to lattice relaxations. High-performance 2.6 nm InAs QW photo-FETs were success-fully demonstrated with a high on/off ratio of 105 and a high effective mobility of 2370 cm2/(V & BULL; s). The outstand-ing transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times. Further, we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared (SWIR; 1.0-2.5 & mu;m) near 2 & mu;m thanks to bandgap engineering through InAs QW structures. Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.& COPY; 2023 Chinese Laser Press

引用

页码：1465 / 1473

页数：9

共 2 条

[1] High-responsivity InAs quantum well photo-FET integrated on Si substrates for extended-range short-wave infrared photodetector applications
DAEHWAN AHN
SUNGHAN JEON
HOYOUNG SUH
SEUNGWAN WOO
RAFAEL JUMAR CHU
DAEHWAN JUNG
WON JUN CHOI
DONGHEE PARK
JIN-DONG SONG
WOO-YOUNG CHOI
JAE-HOON HAN
Photonics Research, 2023, (08) : 1465 - 1473
[2] High-Responsivity Waveguide-Integrated Ge1-x Sn x /Ge Based p-i-n Photodetectors on Silicon Platform for Short-Wave Infrared Applications
Kumar, Harshvardhan
Basu, Rikmantra
IEEE SENSORS LETTERS, 2025, 9 (01)

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