Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

被引：1
|
作者：
Lei, Ye [1 ,2 ]
Yang, Deren [1 ,2 ]
Li, Dongsheng [1 ,2 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[2] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China
来源：
MATERIALS | 2023年 / 16卷 / 03期
基金：
国家重点研发计划;
关键词：
silicon nanosheet; phosphorus doping; photoelectric properties; GROWTH;
D O I：
10.3390/ma16031079
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.
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页数：10
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